喷涂硅靶材 SpraySi Target
产品说明Productdescription
以等离子体为热源，在真空环境，或负压氮气或氩气保护环境下将Si粉末加热到熔融或半熔融状态并高速冲击背管表面形成致密涂层，从而制备出高纯度、低氧含量、高致密度Si靶材。
With plasma as the heat source, high purity, low oxygen content,high density Si targets are produced from Sipowder.The Si powder is heated to molten or semi-molten state invacuum orat a negativepressure of nitrogen (N2)or argon (Ar)and deposited on the surface of backing tube at high speed to form densecoatings.
产品特点Productsfeature
项目 Item | 参数 Specifications | 检测手段 Testingmethod |
纯度Purity（Si+B） | ≥ 99.99% | |
密度Density | ≥2.2 g/cm3 | 阿基米德密度仪 Archimedesdensimeter |
杂质含量Inclusions | Fe+Al+Ca: ≤50 ppm B:≤100 ppm O: ≤2000ppm N: ≤500ppm 杂质总和(O、N、B除外): ≤100 ppm Totalimpurity(excludingO, N,B ):≤100 ppm | ICP |
电阻率 Electricalresistivity | ≤10Ω·cm | 四探针电阻率仪 Four proberesistivity meter |
背管材质 Backingtube
-选用304/316L不锈钢（无磁）。
304/316L stainlesssteel (non-magnetic).
靶材尺寸Dimension
-按照图纸要求加工
According tocustomized drawings.
应用领域Applications
-用于制作SiO2/Si3N4膜，主要用于光学玻璃，触摸屏之AR膜系，Low-E镀膜玻璃，半导体电子，平面显示，触摸屏。
For depositionof SiO2/Si3N4 films,for optical glasses,AR films oftouch panel screens,Low-E glasses,semiconductor devicesandflat panel screens.
